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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FS30R06W1E3B11BOMA1 $16.44 | Infineon Technologies | IGBT MODULE 600V 45A 150W | Tray | Module | Chassis Mount | EasyPACK™ | -40°C ~ 150°C |
![]() FS30R06W1E3BOMA1 $24.74 | Infineon Technologies | IGBT MODULE 600V 60A 150W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MODULE 600V 37A 100W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C | |
| Infineon Technologies | IGBT MODULE 600V 35A 119W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FS33MR12W1M1HB70BPSA1 $84.72 | Infineon Technologies | EASY STANDARD | Tray | - | - | - | - |
![]() FS33MR12W1M1HPB11BPSA1 $77.27 | Infineon Technologies | LOW POWER EASY | Tray | - | - | - | - |
![]() FS35R12KE3GBOSA1 $53.13 | Infineon Technologies | FS35R12 - IGBT MODULE | Bulk | - | - | * | - |
![]() FS35R12KE3GBPSA1 $45.64 | Infineon Technologies | LOW POWER ECONO AG-ECONO2B-311 | Tray | AG-ECONO2B | Chassis Mount | - | -40°C ~ 125°C (TJ) |
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