SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ3600R12HP4HOSA2 $1,011.98 | Infineon Technologies | IGBT MODULE 1200V 4930A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ3600R12HP4PHPSA1 $1,037.64 | Infineon Technologies | IGBT MOD 1200V 4930A AGIHMB190-2 | Tray | AG-IHMB190-2 | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ3600R12KE3NOSA1 $984.48 | Infineon Technologies | IGBT MODULE | Bulk | AG-IHM190-2-1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FZ3600R17HE4HOSA2 $1,117.33 | Infineon Technologies | IGBT MODULE 1700V 7200A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ3600R17HE4PHPSA1 $1,139.37 | Infineon Technologies | IGBT MODULE 1700V 7200A | Tray | Module | Chassis Mount | - | -40°C ~ 150°C |
![]() FZ3600R17HP4B2BOSA2 $1,386.51 | Infineon Technologies | IGBT MODULE 1700V 3600A | Tray | AG-IHMB190 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FZ3600R17HP4HOSA2 $1,117.33 | Infineon Technologies | IGBT MODULE 1700V 3600A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ3600R17KE3 $1,215.91 | Infineon Technologies | IGBT MODULE | Bulk | AG-IHM190-2-1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
AOMU66464QView Product
IRGB4061DPBFView Product
FII24N17AH1SView Product
F3L200R07W2S5FPB55BPSA1View Product
IXBH28N170AView Product
FII24N17AH1View Product
IKB40N65EH5ATMA1View Product
FS75R12KT4B11BOSA1View Product
APT70GR120JD60View Product
APTGT750U60D4GView Product
IXA40RG1200DHG-TRRView Product
IGD08N120S7ATMA1View Product