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Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
IGB50N65H5ATMA1View Product
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APT44GA60BD30View Product
IKFW50N65ES5XKSA1View Product
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IRGSL14C40LPBFView Product
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AOTF5B65M2View Product
IXGK82N120B3View ProductIXSP10N60B2D1View Product
RGW00TS65GC13View Product
IXYT80N90C3View Product
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