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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Renesas Electronics Corporation | MOSFET 2N-CH 5.5V 20A 20WLCSP | Tape & Reel (TR) | 20-WLCSP (2.48x1.17) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Renesas Electronics Corporation | MOSFET 2N-CH 5.5V 12A 20WLCSP | Bulk | 20-WLCSP (2.48x1.17) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() LKK47-06C5 $26.58 | IXYS | MOSFET 2N-CH 600V 47A ISOPLUS264 | Tube | ISOPLUS264™ | Through Hole | CoolMOS™ | -55°C ~ 150°C (TJ) |
![]() LM2724MX/NOPB $0.69 | National Semiconductor | MOSFET | Bulk | - | - | * | - |
![]() LN100LA-G $1.22 | Microchip Technology | MOSFET 2N-CH 1200V 6LFGA | Tape & Reel (TR) | 6-LFGA (3x3) | Surface Mount | - | -25°C ~ 125°C (TJ) |
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8DIP | Tube | 8-PDIP-7B | Through Hole | - | -20°C ~ 125°C (TJ) | |
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | Tube | 8-SOIC | Surface Mount | - | -20°C ~ 125°C (TJ) | |
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | Tape & Reel (TR) | 8-SOIC | Surface Mount | - | -20°C ~ 125°C (TJ) |
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