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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | MOSFET 2N-CH 85V 112A I5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | TrenchMV™ | -55°C ~ 175°C (TJ) | |
| IXYS | MOSFET 2N-CH 75V 120A I5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | TrenchMV™ | -55°C ~ 175°C (TJ) | |
| IXYS | MOSFET 2N-CH 55V 140A I5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | TrenchMV™ | -55°C ~ 175°C (TJ) | |
| Microsemi Corporation | MOSFET 4N-CH 100V 1A MO-036AB | Bulk | MO-036AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET 4P-CH 100V 0.75A | Bulk | - | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET 4P-CH 100V 0.75A MO-036AB | Bulk | MO-036AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET 4N-CH 100V 1A MO-036AB | Bulk | MO-036AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET 4P-CH 100V 0.75A MO-036AB | Bulk | MO-036AB | Through Hole | - | -55°C ~ 150°C (TJ) |
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