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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() 45P40 $1.20 | Goford Semiconductor | P40V,RD(MAX)<14M@-10V,VTH2V~3V T | Tape & Reel (TR),Cut Tape (CT) | TO-252 | Surface Mount | TrenchFET® | -55°C ~ 150°C (TJ) |
![]() 4AK15 $6.53 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 4AK17-91 $17.87 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 4AK18 $5.94 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 4AM14 $9.96 | Renesas Electronics Corporation | P-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 4AM17-91 $13.83 | Renesas Electronics Corporation | POWER N AND P CHANNEL MOSFETS | Bulk | - | - | * | - |
![]() 4N60F $1.03 | EVVO | MOSFET N-CH 600V 4A TO220F | Tube | TO-220F | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() 4N60L $0.73 | UMW | MOSFET N-CH 600V 4A DPAK | Tape & Reel (TR),Cut Tape (CT) | TO-252 (DPAK) | Surface Mount | * | 150°C (TJ) |

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