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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() AUIRLZ44ZL $0.85 | International Rectifier | MOSFET N-CH 55V 51A TO220AB | Bulk | TO-220AB | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 55V 51A TO220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 55V 120A D2PAK | Tube | D2PAK (7-Lead) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 60V 195A D2-PAK | Tube | - | - | * | - | |
![]() AUXCLFZ24NSTRL $0.60 | Infineon Technologies | MOSFET N-CH 55V 17A D2PAK | Tube | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 60V 48A D2PAK | Tube | - | - | * | - | |
| Infineon Technologies | IC DISCRETE | Tube | - | - | - | - | |
| Infineon Technologies | MOSFET N-CH 40V 95A 8PQFN | Tape & Reel (TR) | 8-PQFN (5x6) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |

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