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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 100V 190A D2PAK | Tube | D2PAK (7-Lead) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 100V 190A D2PAK | Tape & Reel (TR) | D2PAK (7-Lead) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | Tape & Reel (TR) | PG-TO263-3 | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 40V 240A D2PAK | Tube | PG-TO263-7 | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 40V 240A D2PAK | Tape & Reel (TR) | PG-TO263-7 | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRLU024Z $0.50 | International Rectifier | MOSFET N-CH 55V 16A I-PAK | Bulk | IPAK | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 55V 16A IPAK | Tube | IPAK | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 55V 42A IPAK | Tube | IPAK | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
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