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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FS150R06KE3BOSA1 $86.76 | Infineon Technologies | IGBT MOD 600V 150A 430W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | MOD IGBT 2 LOW POWER ECONO3-1 | Tray | - | - | - | - | |
![]() FS150R07N3E4B11BOSA1 $81.28 | Infineon Technologies | IGBT MOD 650V 150A 430W | Bulk,Tray | Module | Chassis Mount | EconoPACK™ 3 | -40°C ~ 150°C |
![]() FS150R07N3E4BOSA1 $78.83 | Infineon Technologies | FS150R07 - IGBT MODULE | Bulk | - | - | * | - |
![]() FS150R07PE4BOSA1 $153.10 | Infineon Technologies | IGBT MOD 650V 150A 430W | Bulk,Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 150°C |
![]() FS150R12KE3BOSA1 $116.59 | Infineon Technologies | IGBT MOD 1200V 200A 700W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FS150R12KE3GBOSA1 $277.62 | Infineon Technologies | IGBT MOD 1200V 200A 695W | Bulk,Tray | Module | Chassis Mount | EconoPACK™+ | -40°C ~ 125°C |
![]() FS150R12KT3BOSA1 $111.38 | Infineon Technologies | IGBT MOD 1200V 200A 700W | Bulk,Tray | Module | Chassis Mount | EconoPACK™ 3 | -40°C ~ 125°C |
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