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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 500V 10A TO-3BulkTO-3Through Hole--
Harris CorporationIGBT 400V 10A TO-220ABBulkTO-220ABThrough Hole--
Harris CorporationIGBT 400V 10A TO-220BulkTO-220Through Hole--
Infineon TechnologiesIGBT TRENCH 600V 8A TO251-3TubePG-TO251-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V 9.6A TO247-3Bulk,TubePG-TO247-3-1Through Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT FS 1200V 16A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 140A TO247-3TubePG-TO247-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 30A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
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