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Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
NGD18N40ACLBT4GView Product
IRG4IBC20FDPBFView Product
IKN01N60RC2ATMA1View Product
GPA015A120MN-NDView Product
HKW75N65SHRAView Product
IXXK100N60B3H1View Product
IHW50N65R6XKSA1View Product
HGT1S12N60A4S9AView Product
KGF65A6HView Product
HGTH12N40CIDView Product
IXYK100N120C3View Product
NGTB40N60FL2WGView Product
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