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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
IGA03N120H2XKSA1View Product
APT100GT60JRView Product
PCHMB75W12View Product
FD500R65KE3KNOSA1View Product
P2000DL45X168APTHPSA1View Product
IXGK35N120CD1View Product
IXGT15N120CView Product
IXA40RG1200DHG-TRRView Product
FZ1000R45KL3B5NPSA1View Product
IXA20PG1200DHG-TUBView Product
MMIX4B22N300View Product
IXA30PG1200DHG-TRRView Product
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