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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() AC3M0065090D $7.61 | APSEMI | SIC MOSFET N-CH 900V 37A TO247-3 | Tube | TO-247-3 | Through Hole | SIC MOSFET-D | -55°C ~ 150°C |
![]() AC3M0065100K $7.61 | APSEMI | SIC MOSFET N-CH 1000V 33A TO247- | Tube | TO-247-4 | Through Hole | SIC MOSFET-D | -55°C ~ 150°C |
![]() AC3M0075120D $4.22 | APSEMI | SIC MOSFET N-CH 1200V 33A TO247- | Tube | TO-247-3 | Through Hole | SIC MOSFET-D | -40°C ~ 175°C (TJ) |
![]() AC3M0075120K $4.22 | APSEMI | SIC MOSFET N-CH 1200V 33A TO247- | Tube | TO-247-4 | Through Hole | SIC MOSFET-D | -40°C ~ 175°C (TJ) |
![]() AC3M0120065D $4.22 | APSEMI | SIC MOSFET N-CH 650V 23A TO247-3 | Tube | TO-247-3 | Through Hole | SIC MOSFET-D | -40°C ~ 175°C (TJ) |
![]() AC3M0120065K $4.22 | APSEMI | SIC MOSFET N-CH 650V 23A TO247-4 | Tube | TO-247-4 | Through Hole | SIC MOSFET-D | -40°C ~ 175°C (TJ) |
![]() AC3M0120090D $4.22 | APSEMI | SIC MOSFET N-CH 900V 24A TO247-3 | Tube | TO-247-3 | Through Hole | SIC MOSFET-D | -55°C ~ 150°C |
![]() AC3M0120100K $2.75 | APSEMI | SIC MOSFET N-CH 1000V 24A TO247- | Tube | TO-247-4 | Through Hole | SIC MOSFET-D | -55°C ~ 150°C |

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