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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT106N60B2C6 $14.10 | Microchip Technology | MOSFET N-CH 600V 106A T-MAX | Tube | T-MAX™ [B2] | Through Hole | CoolMOS™ | -55°C ~ 150°C (TJ) |
![]() APT106N60LC6 $17.81 | Microchip Technology | MOSFET N-CH 600V 106A TO264 | Tube | TO-264 (L) | Through Hole | CoolMOS™ | -55°C ~ 150°C (TJ) |
![]() APT10M07JVFR $57.81 | Microchip Technology | MOSFET N-CH 100V 225A ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS V® | - |
| Microsemi Corporation | MOSFET N-CH 100V 225A ISOTOP | Bulk | ISOTOP® | Chassis Mount | POWER MOS V® | -55°C ~ 150°C (TJ) | |
![]() APT10M09B2VFRG $12.21 | Microsemi Corporation | MOSFET N-CH 100V 100A T-MAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS V® | -55°C ~ 150°C (TJ) |
![]() APT10M09LVFRG $20.23 | Microchip Technology | MOSFET N-CH 100V 100A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS V® | - |
![]() APT10M11B2VFRG $9.73 | Microsemi Corporation | MOSFET N-CH 100V 100A T-MAX | Tube | T-MAX™ | Through Hole | POWER MOS V® | -55°C ~ 150°C (TJ) |
![]() APT10M11JVFR $50.27 | Microchip Technology | MOSFET N-CH 100V 144A ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS V® | - |