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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT11F80B $3.43 | Microchip Technology | MOSFET N-CH 800V 12A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT11N80BC3G $3.80 | Microchip Technology | MOSFET N-CH 800V 11A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | MOSFET N-CH 800V 11A TO220 | Tube | TO-220 [K] | Through Hole | CoolMOS™ | -55°C ~ 150°C (TJ) | |
![]() APT1201R2BFLLG $22.87 | Microchip Technology | MOSFET N-CH 1200V 12A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | - |
![]() APT1201R2BLLG $22.87 | Microchip Technology | MOSFET N-CH 1200V 12A TO247 | Tube | TO-247-3 | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT1201R4BFLLG $19.83 | Microchip Technology | MOSFET N-CH 1200V 9A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT1201R4BLLG $11.27 | Microchip Technology | MOSFET N-CH 1200V 9A TO247 | Tube | TO-247-3 | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT1201R4SFLLG $20.72 | Microchip Technology | MOSFET N-CH 1200V 9A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS 7® | - |

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