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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | MOSFET N-CH 1200V 18A T-MAX | Bulk | T-MAX™ [B2] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) | |
![]() APT12067LFLLG $28.84 | Microchip Technology | MOSFET N-CH 1200V 18A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS 7® | - |
![]() APT12080JVFR $42.95 | Microchip Technology | MOSFET N-CH 1200V 15A ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS V® | - |
| Microsemi Corporation | MOSFET N-CH 1200V 15A ISOTOP | Bulk | ISOTOP® | Chassis Mount | POWER MOS V® | -55°C ~ 150°C (TJ) | |
![]() APT12080LVRG $21.12 | Microchip Technology | MOSFET N-CH 1200V 16A TO264 | Tube | TO-264 (L) | Through Hole | POWER MOS V® | -55°C ~ 150°C (TJ) |
![]() APT12M80B $3.39 | Microchip Technology | MOSFET N-CH 800V 13A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | SICFET N-CH 700V 110A TO247-3 | Bulk | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
| Microsemi Corporation | SICFET N-CH 700V 78A SOT227 | Bulk | SOT-227 (ISOTOP®) | Chassis Mount | - | -55°C ~ 175°C (TJ) |
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