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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulk-Through Hole--40°C ~ 150°C (TJ)
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulk-Through Hole--40°C ~ 150°C (TJ)
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulk-Through Hole--40°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT, 10A, 600V, N-CHANNELBox25PM-AAChassis Mount--40°C ~ 150°C (TJ)
onsemiIGBT MODULE 600V 10A 66W 25PMAABox25PM-AAChassis Mount--40°C ~ 150°C (TJ)
onsemiIGBT MODULE 600V 20A 89W 25PMAABox25PM-AAChassis Mount--40°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT, 20A, 600V, N-CHANNELBox25PM-AAChassis Mount--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE 1200V 0 94WBulk,TrayModuleChassis MountEasyPIM™-40°C ~ 150°C
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