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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MOD FP100R06KE3B16BOSA1 | Tray | - | - | - | - | |
![]() FP100R06KE3BOSA1 $89.46 | Infineon Technologies | IGBT MOD 600V 100A 335W | Tray | Module | Chassis Mount | EconoPIM™ 3 | -40°C ~ 150°C |
![]() FP100R07N2E4BPSA1 $63.04 | Infineon Technologies | LOW POWER ECONO | Tray | - | - | - | - |
![]() FP100R07N3E4B11BOSA1 $78.63 | Infineon Technologies | IGBT MOD 650V 100A 335W | Tray | Module | Chassis Mount | EconoPIM™ 3 | -40°C ~ 150°C |
![]() FP100R07N3E4B16BOSA1 $98.12 | Infineon Technologies | LOW POWER ECONO AG-ECONO3-3 | Tray | - | - | * | - |
![]() FP100R07N3E4BOSA1 $90.86 | Infineon Technologies | IGBT MOD 650V 100A 335W | Bulk,Tray | Module | Chassis Mount | EconoPIM™ 3 | -40°C ~ 150°C |
![]() FP100R12KT4B11BOSA1 $108.71 | Infineon Technologies | IGBT MOD 1200V 100A 515W | Bulk,Tray | Module | Chassis Mount | EconoPIM™ 3 | -40°C ~ 150°C |
![]() FP100R12KT4BOSA1 $105.60 | Infineon Technologies | IGBT MOD 1200V 100A 515W | Tray | Module | Chassis Mount | EconoPIM™ 3 | -40°C ~ 150°C |
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