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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FP100R12KT4PB11BPSA1 $111.01 | Infineon Technologies | IGBT MODULE LOW PWR ECONO3-3 | Tray | - | - | EconoPIM™ 3 | - |
![]() FP100R12KT4PBPSA1 $102.82 | Infineon Technologies | MOD IGBT LOW PWR ECONO3-3 | Bulk,Tray | - | - | EconoPIM™ 3 | - |
![]() FP100R12N2T7B11BPSA1 $71.99 | Infineon Technologies | LOW POWER ECONO | Tray | AG-ECONO2B | Chassis Mount | EconoPIM™ 2 | -40°C ~ 175°C (TJ) |
![]() FP100R12N2T7BPSA1 $126.42 | Infineon Technologies | LOW POWER ECONO AG-ECONO2-4 | Tray | AG-ECONO2B | Chassis Mount | EconoPIM™ 2 | -40°C ~ 175°C (TJ) |
![]() FP100R12N2T7BPSA2 $85.30 | Infineon Technologies | LOW POWER ECONO | Tray | AG-ECONO2B | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() FP100R12N3T4B80BPSA1 $108.71 | Infineon Technologies | LOW POWER ECONO AG-ECONO3-386 | Tray | - | - | * | - |
![]() FP100R12N3T4PB81BPSA1 $101.31 | Infineon Technologies | LOW POWER ECONO | Tray | - | - | - | - |
![]() FP100R12N3T7B11BPSA1 $105.78 | Infineon Technologies | LOW POWER ECONO AG-ECONO3B-711 | Tray | - | - | EconoPIM™ 3 | - |
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