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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 650V 65A TO247-3TubePG-TO247-3Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 900V 60A TO247-3TubePG-TO247-3-1Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 900V 60A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 80A TO247-3TubePG-TO247-3Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 80A TO247-3TubePG-TO247-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 1350V 80A TO247-3TubePG-TO247-3Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1350V 80A TO247-3TubePG-TO247-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1400V 80A TO247-44TubePG-TO247-44Through Hole--40°C ~ 175°C (TJ)
Add ComparisonUp to 4 can be added

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