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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT6025BVRG $13.06 | Microchip Technology | MOSFET N-CH 600V 25A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS V® | - |
![]() APT6025SVRG $13.97 | Microchip Technology | MOSFET N-CH 600V 25A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS V® | - |
![]() APT6029BFLLG $11.31 | Microchip Technology | MOSFET N-CH 600V 21A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT6029BLLG $11.11 | Microchip Technology | MOSFET N-CH 600V 21A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT6029SLLG $12.00 | Microchip Technology | MOSFET N-CH 600V 21A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS 7® | - |
| Microsemi Corporation | MOSFET N-CH 600V 23A TO247AD | Tube | TO-247AD | Through Hole | POWER MOS IV® | -55°C ~ 150°C (TJ) | |
![]() APT6030BVRG $10.64 | Microchip Technology | MOSFET N-CH 600V 21A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS V® | - |
![]() APT6038BFLLG $8.95 | Microchip Technology | MOSFET N-CH 600V 17A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | - |

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