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Bipolar RF Transistors

Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microsemi CorporationRF TRANS NPN 10V 400MHZ TO-72BulkTO-72Through Hole--
2N5109
2N5109
$3.78
Microsemi CorporationRF TRANS NPN 20V 1.2GHZ TO-39BulkTO-39Through Hole--
Central Semiconductor CorpRF TRANS NPN 20V 1.2GHZ TO-39BulkTO-39Through Hole--65°C ~ 200°C (TJ)
Central Semiconductor CorpRF TRANS NPN 20V 1.2GHZ UBBulkUBSurface Mount--65°C ~ 200°C (TJ)
Microsemi CorporationRF TRANS NPN 12V 200MHZ TO-72BulkTO-72Through Hole--
Central Semiconductor CorpRF TRANS NPN 12V 2GHZ TO-72BulkTO-72Through Hole--65°C ~ 200°C (TJ)
Central Semiconductor Corp12V 50MA 200MW TH TRANSISTOR-SMABoxTO-72Through Hole--65°C ~ 200°C (TJ)
onsemiRF TRANS NPN 15V TO-92-3BulkTO-92-3Through Hole--55°C ~ 150°C (TJ)
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