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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
APTGT150TL60GView Product
FII24N17AH1View Product
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IXSX80N60BView Product
FII30-06DView Product
BSM300GA160DN13CB7HOSA1View Product
MMIX4B22N300View Product
IXA40PG1200DHG-TRRView Product
APTGT200A60TGView Product
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FGH75T65UPD-F085View Product
FP10R06KL4BOMA1View Product
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