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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF4MR12W2M1HPB11BPSA1 $168.80 | Infineon Technologies | MOSFET 2N-CH 1200V AG-EASY2B | Tray | AG-EASY2B | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() FF4MR20KM1HHPSA1 $429.60 | Infineon Technologies | MOSFET 2N-CH 2000V AG-62MMHB | Tray | AG-62MMHB | Chassis Mount | C | -40°C ~ 175°C (TJ) |
![]() FF4MR20KM1HPHPSA1 $433.16 | Infineon Technologies | MOSFET 2N-CH 2000V AG-62MMHB | Tray | AG-62MMHB | Chassis Mount | C, CoolSiC™ | -40°C ~ 175°C |
![]() FF5MR20KM1HHPSA1 $288.39 | Infineon Technologies | MOSFET | Tray | - | - | - | - |
![]() FF5MR20KM1HSHPSA1 $336.62 | Infineon Technologies | MEDIUM POWER 62MM | Tray | - | - | - | - |
![]() FF6MR12KM1BOSA1 $368.78 | Infineon Technologies | MOSFET 2N-CH 1200V 250A AG-62MM | Bulk,Tray | AG-62MM | Chassis Mount | CoolSiC™ | -40°C ~ 150°C (TJ) |
![]() FF6MR12KM1HHPSA1 $180.17 | Infineon Technologies | MOSFET | Tray | - | - | - | - |
![]() FF6MR12KM1HPHPSA1 $183.80 | Infineon Technologies | MOSFET | Tray | - | - | - | - |
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