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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FS03MR12A7MA2BHPSA1 $1,093.95 | Infineon Technologies | MOSFET 6N-CH 1200V 310A | Box | - | Chassis Mount | HybridPACK™ | -40°C ~ 175°C (TJ) |
![]() FS05MR12A6MA1BBPSA1 $834.67 | Infineon Technologies | MOSFET 1200V 200A AG-HYBRIDD | Tray | AG-HYBRIDD-2 | Chassis Mount | HybridPACK™ | - |
![]() FS10ASJ-2-T13#B00 $0.82 | Renesas Electronics Corporation | MOSFET N-CH | Bulk | - | - | * | - |
![]() FS10ASJ-3-T13#C01 $0.82 | Renesas Electronics Corporation | MOSFET N-CH | Bulk | - | - | * | - |
![]() FS10ASJ-3-T13#C02 $0.82 | Renesas Electronics Corporation | MOSFET N-CH | Bulk | - | - | * | - |
![]() FS13MR12W2M1HB70BPSA1 $179.18 | Infineon Technologies | MOSFET 6N-CH 1200V 62.5A | Tray | - | - | CoolSiC™ | - |
![]() FS13MR12W2M1HPB11BPSA1 $164.61 | Infineon Technologies | MOSFET | Tray | - | - | - | - |
![]() FS30ASJ-06F#B00 $0.89 | Renesas Electronics Corporation | MOSFET N-CH | Bulk | - | - | * | - |