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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APM4953-EV $0.52 | EVVO | MOSFET 30V 5.3A 8SOP | Tape & Reel (TR),Cut Tape (CT) | 8-SOP | Surface Mount | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | MOSFET N-CH 1000V 10.5A TO247AD | Tube | TO-247AD | Through Hole | POWER MOS IV® | -55°C ~ 150°C (TJ) | |
![]() APT1001R6BFLLG $22.96 | Microchip Technology | MOSFET N-CH 1000V 8A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microchip Technology | MOSFET N-CH 1000V 11A TO247AD | Tube | TO-247AD | Through Hole | POWER MOS IV® | -55°C ~ 150°C (TJ) | |
![]() APT1001RBVFRG $13.04 | Microchip Technology | MOSFET N-CH 1000V 11A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS V® | - |
![]() APT1001RBVRG $11.98 | Microchip Technology | MOSFET N-CH 1000V 11A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS V® | - |
![]() APT1001RSVRG $12.87 | Microchip Technology | MOSFET N-CH 1000V 11A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS V® | - |
![]() APT10021JFLL $86.02 | Microchip Technology | MOSFET N-CH 1000V 37A ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |