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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 40V 123A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 40V 120A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 40V 195A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRFSL8407 $4.12 | International Rectifier | MOSFET N-CH 40V 195A TO262 | Bulk | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
![]() AUIRFSL8408 $1.45 | Infineon Technologies | MOSFET N-CH 40V 195A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 40V 195A TO262 | Tube | TO-262 | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRFU1010Z $0.91 | International Rectifier | MOSFET N-CH 55V 42A TO251-3 | Bulk | PG-TO251-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 55V 91A TO262 | Tube | TO-262 | Through Hole | - | - |
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