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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 100V 180A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 100V 180A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 100V 180A TO262 | Tape & Reel (TR) | TO-262-3 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 150V 99A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 100V 75A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRFSL6535 $1.26 | International Rectifier | MOSFET N-CH 300V 19A TO262-3-901 | Bulk | PG-TO262-3-901 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
![]() AUIRFSL6535 $1.26 | Infineon Technologies | MOSFET N-CH 300V 19A TO262-3 | Bulk,Tube | PG-TO262-3-901 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
![]() AUIRFSL8403 $1.02 | International Rectifier | MOSFET N-CH 40V 123A TO262 | Bulk | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
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