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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MOD 1200V 200A 700W | Bulk | Module | Chassis Mount | - | 150°C (TJ) | |
| onsemi | IGBT MODULE PWR 3-PHASE | Tube | - | - | * | - | |
| Infineon Technologies | IGBT MODULE 1200V 1000A | Tray | - | - | * | - | |
| Infineon Technologies | IGBT MODULE 1200V 1000A | Tray | - | - | * | - | |
![]() FZ1000R16KF4NOSA1 $421.93 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
| Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB13 | Tray | AG-IHVB130-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT MODULE 3300V 1000A 1600W | Tray | - | Chassis Mount | IHM-B | -40°C ~ 150°C | |
![]() FZ1000R33HE3BPSA1 $1,319.37 | Infineon Technologies | IGBT MODULE 3300V 1000A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
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