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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MOD 1200V 200A 700WBulkModuleChassis Mount-150°C (TJ)
onsemiIGBT MODULE PWR 3-PHASETube--*-
Infineon TechnologiesIGBT MODULE 1200V 1000ATray--*-
Infineon TechnologiesIGBT MODULE 1200V 1000ATray--*-
Infineon TechnologiesIGBT MODULEBulk--*-
Infineon TechnologiesIHV IHM T XHP 3 3-6 5K AG-IHVB13TrayAG-IHVB130-3Chassis MountIHM-B-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE 3300V 1000A 1600WTray-Chassis MountIHM-B-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE 3300V 1000ATrayModuleChassis MountIHM-B-40°C ~ 150°C
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