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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ1000R33HE3C1NOSA1 $127,500.00 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K | Tray | AG-IHVB130-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
![]() FZ1000R33HL3BPSA1 $1,375.59 | Infineon Technologies | IGBT MOD 3300V 1000A 1600W | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1000R45KL3B5NPSA1 $1,385.67 | Infineon Technologies | IHV IHM T | Tray | A-IHV130 | Chassis Mount | - | 125°C (TJ) |
![]() FZ1000R65KE4NPSA1 $2,777.97 | Infineon Technologies | IHV IHM T | Tray | - | Chassis Mount | - | -50°C ~ 135°C (TJ) |
![]() FZ1000R65KE4P2NPSA1 $2,794.55 | Infineon Technologies | IHV IHM T | Tray | - | - | - | - |
![]() FZ1200R12HE4HOSA2 $494.49 | Infineon Technologies | IGBT MODULE 1200V 1200A | Tray | - | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
![]() FZ1200R12HE4PHPSA1 $509.79 | Infineon Technologies | IGBT MODULE 1200V 1825A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1200R12HP4HOSA2 $494.49 | Infineon Technologies | IGBT MOD 1200V 1790A 7150W | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
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