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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ1200R12KE3NOSA1 $600.31 | Infineon Technologies | IGBT MODULE | Bulk | - | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| Infineon Technologies | IGBT MODULE 1200V 1200A | Tray | - | Chassis Mount | IHM-B | 150°C (TJ) | |
| Infineon Technologies | IGBT MODULE 1200V 1200A | Tray | - | - | * | - | |
![]() FZ1200R12KF5NOSA1 $592.41 | Infineon Technologies | FZ1200R12K - IGBT MODULE | Bulk | - | - | * | - |
| Infineon Technologies | IGBT MODULE 1200V 1200A | Tray | - | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) | |
![]() FZ1200R12ME4B11BOSA1 $592.41 | Infineon Technologies | FZ1200R12M - MEDIUM POWER ECONO | Bulk | - | - | - | - |
![]() FZ1200R17HE4HOSA2 $522.59 | Infineon Technologies | IGBT MOD 1700V 1200A 7800W | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1200R17HE4PHPSA1 $538.00 | Infineon Technologies | IGBT MODULE 1700V 1200A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
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