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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MODULEBulk-Chassis Mount--40°C ~ 125°C (TJ)
Infineon TechnologiesIGBT MODULE 1200V 1200ATray-Chassis MountIHM-B150°C (TJ)
Infineon TechnologiesIGBT MODULE 1200V 1200ATray--*-
Infineon TechnologiesFZ1200R12K - IGBT MODULEBulk--*-
Infineon TechnologiesIGBT MODULE 1200V 1200ATray-Chassis MountIHM-B-40°C ~ 125°C (TJ)
Infineon TechnologiesFZ1200R12M - MEDIUM POWER ECONOBulk----
Infineon TechnologiesIGBT MOD 1700V 1200A 7800WTrayModuleChassis MountIHM-B-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE 1700V 1200ATrayModuleChassis MountIHM-B-40°C ~ 150°C
Add ComparisonUp to 4 can be added

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