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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ1200R45HL4S7BPSA1 $1,655.84 | Infineon Technologies | IHV IHM T | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FZ1200R45KL3B5NOSA1 $1,836.51 | Infineon Technologies | IGBT MODULE 4500V 1200A | Tray | Module | Chassis Mount | - | -50°C ~ 125°C |
![]() FZ1200R45KL3B5P2NOSA1 $1,919.39 | Infineon Technologies | IHV IHM T | Tray | - | - | - | - |
![]() FZ1400R33HE4BPSA1 $1,481.05 | Infineon Technologies | IGBT MODULE DIODE HVB130-3 | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) | |
![]() FZ1500R33HE3BPSA1 $1,513.81 | Infineon Technologies | IGBT MODULE 3300V 1500A | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1500R33HE3C1BPSA1 $127,500.00 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IHV IHM T XHP 3 3-6 5K | Tray | AG-IHVB190-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
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