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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MODULE A-IHM130-1 | Tray | - | - | IHM-B | - | |
![]() FZ1600R33HE4BPSA1 $1,279.08 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB13 | Tray | AG-IHVB130-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
![]() FZ1800R12HE4B9HOSA2 $738.49 | Infineon Technologies | IGBT MODULE 1200V 2735A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1800R12HP4B9HOSA2 $733.12 | Infineon Technologies | IGBT MODULE 1200V 2700A | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1800R12HP4B9NPSA1 $643.35 | Infineon Technologies | INSULATED GATE BIPOLAR TRANSISTO | Bulk | AG-IHMB190 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FZ1800R12KL4C $987.62 | Infineon Technologies | IGBT MODULE | Bulk | AG-IHM190-2-1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FZ1800R17HE4B9HOSA2 $778.11 | Infineon Technologies | IGBT MODULE 1700V 1800A | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
| Infineon Technologies | FZ1800R17 - IGBT MODULE | Bulk | AG-IHMB190 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
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