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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MODULE A-IHM130-1Tray--IHM-B-
Infineon TechnologiesIHV IHM T XHP 3 3-6 5K AG-IHVB13TrayAG-IHVB130-3Chassis MountIHM-B-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE 1200V 2735ATrayModuleChassis MountIHM-B-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE 1200V 2700ABulk,TrayModuleChassis MountIHM-B-40°C ~ 150°C
Infineon TechnologiesINSULATED GATE BIPOLAR TRANSISTOBulkAG-IHMB190Chassis Mount--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULEBulkAG-IHM190-2-1Chassis Mount--40°C ~ 125°C (TJ)
Infineon TechnologiesIGBT MODULE 1700V 1800ABulk,TrayModuleChassis MountIHM-B-40°C ~ 150°C
Infineon TechnologiesFZ1800R17 - IGBT MODULEBulkAG-IHMB190Chassis Mount--40°C ~ 150°C (TJ)
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