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FS75R12W2T4PB11BPSA1View Product
IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MODULE 1200V 1600A | Tray | - | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) | |
 FZ1600R17HP4B21BOSA2 $816.20 | Infineon Technologies | IGBT MODULE 1700V 1600A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
FZ1600R17HP4B2BOSA2 $837.15 | Infineon Technologies | IGBT MODULE 1700V 1600A | Tray | A-IHV130-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
FZ1600R17HP4HOSA2 $565.15 | Infineon Technologies | FZ1600R17 - IGBT MODULE | Bulk | - | - | * | - |
FZ1600R17KE3B2NOSA1 $666.88 | Infineon Technologies | IGBT MODULE 1700V 1600A | Bulk,Tray | A-IHV130-3 | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) |
FZ1600R17KE3NOSA1 $688.18 | Infineon Technologies | IGBT MOD 1700V 2300A 8950W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C (TJ) |
FZ1600R17KF6CB2NOSA1 $1,044.31 | Infineon Technologies | FZ1600R17KF6C_B2 - 1700V IGBT MO | Bulk | - | - | * | - |
FZ1600R17KF6CB2S1NOSA1 $1,011.29 | Infineon Technologies | IGBT MODULE | Bulk | AG-IHMB130-2-1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
