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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ1500R33HE3S6BOSA1 $1,558.05 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) | |
![]() FZ1500R33HL3BPSA1 $1,753.64 | Infineon Technologies | IGBT MODULE 3300V 1500A | Tray | Module | Chassis Mount | - | -40°C ~ 150°C |
![]() FZ1500R33HL3BPSA3 $1,326.44 | Infineon Technologies | FZ1500R33 - INSULATED GATE BIPOL | Bulk | - | - | * | - |
![]() FZ1500R33HL3NPSA1 $1,326.44 | Infineon Technologies | FZ1500R33 - INSULATED GATE BIPOL | Bulk | - | - | * | - |
![]() FZ1500R45KL3B5NPSA1 $1,836.51 | Infineon Technologies | IHV IHM T | Tray | - | Chassis Mount | - | -50°C ~ 125°C (TJ) |
![]() FZ1600R12HP4HOSA2 $553.35 | Infineon Technologies | IGBT MODULE 1200V 1600A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MODULE 1200V AIHM130-2 | Tray | - | - | - | - |
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