SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ1200R17HP4B2BOSA2 $852.81 | Infineon Technologies | IGBT MOD 1700V 1200A 7800W | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1200R17HP4HOSA2 $522.59 | Infineon Technologies | IGBT MOD 1700V 1200A 7800W | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
| Infineon Technologies | IGBT MODULE 1700V 1200A | Tray | - | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) | |
![]() FZ1200R17KF4CNOSA1 $980.03 | Infineon Technologies | FZ1200R17 - INSULATED GATE BIPOL | Bulk | - | - | * | - |
| Infineon Technologies | IGBT MODULE 1700V 1200A | Tray | - | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) | |
![]() FZ1200R33HE3BPSA1 $1,385.67 | Infineon Technologies | IGBT MODULE 3300V 1200A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
![]() FZ1200R33HE4DB9BPSA1 $1,319.37 | Infineon Technologies | IHV IHM T | Tray | - | - | - | - |
| Infineon Technologies | IGBT MODULE 3300V 2000A | Tray | - | Chassis Mount | - | -40°C ~ 125°C |
APTGF150H120GView Product
FP25R12W2T4PB11BPSA1View Product
STGP20H65DFB2View Product
FGD2040G3-F085View Product
MMIX4B20N300View Product
FII24N17AH1SView Product
FII40-06DView Product
IXA40PG1200DHG-TUBView Product
STGB20N45LZAGView Product
APTGX150DU120T3AGView Product
DF1400R12IP4DBOSA1View Product
IXXP12N65B4D1View Product