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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 1200V 80A TO247-4TubePG-TO247-4Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 80A TO247-4TubePG-TO247-4-2Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V 100A TO247-4TubePG-TO247-4Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 75A TO247-4TubePG-TO247-4-U10Through HoleTRENCHSTOP™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V 150A TO247-4TubePG-TO247-4Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 83A TO247-4TubePG-TO247-4-U10Through HoleTRENCHSTOP™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 150A TO247TubePG-TO247-4-2Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 650V 85A TO247-4TubePG-TO247-4Through HoleTrenchStop™ 5-40°C ~ 175°C (TJ)
Add ComparisonUp to 4 can be added

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