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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BUZ31HXKSA1 $0.75 | Infineon Technologies | MOSFET N-CH 200V 14.5A TO220-3 | Tube,Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ31L $0.81 | Infineon Technologies | MOSFET N-CH 200V 13.5A TO220-3 | Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
| Infineon Technologies | MOSFET N-CH 200V 13.5A TO220-3 | Tape & Reel (TR) | PG-TO220-3-1 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 200V 13.5A TO220-3 | Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) | |
![]() BUZ32 $0.70 | Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
| Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) | |
![]() BUZ323 $2.41 | Infineon Technologies | N-CHANNEL POWER MOSFET | Bulk | - | - | - | - |
| Infineon Technologies | MOSFET N-CH 200V 9.5A TO263-3 | Tube | PG-TO263-3-2 | Surface Mount | SIPMOS® | -55°C ~ 150°C (TJ) |
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