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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | Tube | - | - | * | - | |
| Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | Tube | - | - | * | - | |
| Infineon Technologies | MOSFET N-CH 75V 106A D2PAK | Tube | - | - | * | - | |
| Infineon Technologies | MOSFET N-CH 100V 17A D2PAK | Tube | - | - | * | - | |
| Infineon Technologies | MOSFET N-CH 150V 86A D2PAK | Tube | - | - | * | - | |
![]() 64-4051 $0.63 | Infineon Technologies | MOSFET N-CH 55V 16A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 40V 42A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 55V 28A I-PAK | Tube | IPAK | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |

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