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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 12V 15A 8SO | Tube | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 20V 10A/12A 8SOIC | Tube | - | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 30V 19A 8-SOIC | Tube | - | Surface Mount | - | -55°C ~ 150°C (TA) | |
| Infineon Technologies | MOSFET P-CH 12V 16A 8SO | Tube | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SO | Tube | - | - | * | - | |
| Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SO | Tube | - | - | * | - | |
![]() 630A $0.22 | Goford Semiconductor | MOSFET N-CH 200V 11A TO-252 | Tape & Reel (TR) | TO-252 | Surface Mount | TrenchFET® | -55°C ~ 150°C (TJ) |
![]() 630AT $1.16 | Goford Semiconductor | N200V,RD(MAX)<250M@10V,RD(MAX)<3 | Tube | TO-220 | Through Hole | TrenchFET® | -55°C ~ 150°C (TJ) |

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