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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() 25N06 $1.05 | UMW | TO-252 N-CHANNEL POWER MOSFET | Tape & Reel (TR),Cut Tape (CT) | TO-252 (DPAK) | Surface Mount | UMW | -55°C ~ 150°C (TJ) |
![]() 25P06 $1.16 | Goford Semiconductor | P60V,RD(MAX)<45M@-10V,VTH2V~3V T | Tape & Reel (TR),Cut Tape (CT) | TO-252 | Surface Mount | TrenchFET® | -55°C ~ 150°C (TJ) |
| Microchip Technology | RF MOSFET HEMT 50V 55-QP | Bulk | 55-QP | Surface Mount | V | ||
| Microchip Technology | RF MOSFET GAN 55-QP | Bulk | 55-QP | Surface Mount | - | ||
| Microchip Technology | RF MOSFET HEMT 50V 55-QP | Bulk | 55-QP | Surface Mount | - | ||
| Microchip Technology | RF MOSFET HEMT 50V 55-QP | Bulk | 55-QP | Surface Mount | VP | ||
| Microchip Technology | RF MOSFET HEMT 50V 55-QP | Bulk | 55-QP | Surface Mount | - | ||
![]() 2N3819 $0.45 | Central Semiconductor Corp | RF MOSFET JFET 25V TO92-3 | Bulk | TO-92-3 | Through Hole | - |

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