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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V 62A TO-247ADTubeTO-247ADThrough HoleCooliRIGBT™-55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 60A TO-247ADBulk,TubeTO-247ADThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 60A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 60A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 60A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 48A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 48A TO247ADBulk,TubePG-TO247ADThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 55A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 175°C (TJ)
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