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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 78A D2PAKTubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 78A D2PAKTape & Reel (TR)D2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 59A D2PAKTubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 59A D2PAKTape & Reel (TR)D2PAKSurface Mount--55°C ~ 175°C (TJ)
International RectifierAUIRGSL30B60K - AUTOMOTIVE IGBTBulk--*-
International RectifierIGBT TRENCH 600V 59A TO-262BulkTO-262Through Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 12A IPAKTubeIPAKThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V TO247-3Tube----
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