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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT NPT 600V 78A D2PAK | Tube | D2PAK | Surface Mount | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 78A D2PAK | Tape & Reel (TR) | D2PAK | Surface Mount | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT TRENCH 600V 59A D2PAK | Tube | D2PAK | Surface Mount | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT TRENCH 600V 59A D2PAK | Tape & Reel (TR) | D2PAK | Surface Mount | - | -55°C ~ 175°C (TJ) | |
![]() AUIRGSL30B60K $2.00 | International Rectifier | AUIRGSL30B60K - AUTOMOTIVE IGBT | Bulk | - | - | * | - |
![]() AUIRGSL4062D1 $3.12 | International Rectifier | IGBT TRENCH 600V 59A TO-262 | Bulk | TO-262 | Through Hole | - | -55°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT TRENCH 600V 12A IPAK | Tube | IPAK | Through Hole | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT 1200V TO247-3 | Tube | - | - | - | - |
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