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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BIDW40N65H5 $4.96 | Bourns Inc. | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() BIDW50N65T $4.29 | Bourns Inc. | IGBT TRENCH FS 650V 100A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() BIDW75N65EH5 $6.53 | Bourns Inc. | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() BIDW75N65ES5 $6.53 | Bourns Inc. | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() BSM100GAL120DLCKHOSA1 $67.31 | Infineon Technologies | IGBT MOD 1200V 205A 835W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() BSM100GB120DLCHOSA1 $159.81 | Infineon Technologies | BSM100GB120 - INSULATED GATE BIP | Bulk | - | - | * | - |
| Infineon Technologies | IGBT MOD 1200V 100A 830W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() BSM100GB120DN2B2HOSA1 $69.99 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
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