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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Bourns Inc.IGBT TRENCH FS 650V 80A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Bourns Inc.IGBT TRENCH FS 650V 100A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 650V 150A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Bourns Inc.IGBT TRENCH FS 650V 150A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 205A 835WBulk,TrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesBSM100GB120 - INSULATED GATE BIPBulk--*-
Infineon TechnologiesIGBT MOD 1200V 100A 830WTrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MODULEBulk--*-
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