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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesBSM100GB120DN2 - IGBT MODULEBulk--*-
Infineon TechnologiesMEDIUM POWER 62MMBulk--*-
Infineon TechnologiesMEDIUM POWER 34MMBulk--*-
Infineon TechnologiesINSULATED GATE BIPOLAR TRANSISTOBulk--*-
Infineon TechnologiesIGBT MOD 1700V 200A 960WBulk,TrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MOD 1700V 145A 1000WTrayModuleChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 600V 130A 445WBulk,BulkModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesLOW POWER ECONOBulk--*-
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