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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BSM150GB170DLCE3256HDLA1 $89.97 | Infineon Technologies | IGBT MODULE 1700V 300A 1250W | Bulk,Tray | - | Chassis Mount | - | -40°C ~ 125°C |
![]() BSM150GB170DLCHOSA1 $138.67 | Infineon Technologies | IGBT MOD 1700V 300A 1250W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() BSM150GB170DN2E3256HDLA1 $89.97 | Infineon Technologies | BSM150GB170DN2 - INSULATED GATE | Bulk | Module | Chassis Mount | - | 150°C (TJ) |
| Infineon Technologies | IGBT MOD 1700V 220A 1250W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | IGBT MOD 600V 180A 595W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MOD 600V 180A 570W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | IGBT MODULE 1200V | Tray | - | - | - | - | |
![]() BSM15GD120DLCE3224BOSA1 $58.45 | Infineon Technologies | IGBT MOD 1200V 35A 145W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
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