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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MOD 1200V 25A 145W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | IGBT MODULE 1200V | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | IGBT MOD 1200V 25A 145W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | LOW POWER ECONO AG-ECONO2A-211 | Tray | AG-ECONO2A | Chassis Mount | - | 150°C (TJ) | |
![]() BSM15GP120BOSA1 $62.54 | Infineon Technologies | IGBT MOD 1200V 35A 180W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
| Infineon Technologies | LOW POWER ECONO AG-ECONO2C-211 | Tray | AG-ECONO2B | Chassis Mount | - | 150°C (TJ) | |
![]() BSM15GP60BOSA1 $66.06 | Infineon Technologies | IGBT MODULE 600V 25A 100W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() BSM200GA120DLCHOSA1 $151.20 | Infineon Technologies | IGBT MOD 1200V 370A 1450W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
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