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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BSM200GA120DLCSHOSA1 $151.20 | Infineon Technologies | IGBT MOD 1200V 370A 1450W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
| Infineon Technologies | IGBT MOD 1200V 300A 1550W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
![]() BSM200GA170DLCHOSA1 $123.41 | Infineon Technologies | IGBT MOD 1700V 400A 1920W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
| Infineon Technologies | IGBT MOD 1200V 420A 1550W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MOD 1200V 290A 1400W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
![]() BSM200GB170DLCE3256HDLA1 $116.59 | Infineon Technologies | IGBT MODULE 1700V 400A 1660W | Bulk | - | - | * | - |
![]() BSM200GB170DLCHOSA1 $182.04 | Infineon Technologies | BSM200GB170DL - IGBT MODULE | Bulk | - | - | * | - |
| Infineon Technologies | IGBT MOD 600V 230A 730W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C |
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