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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MODULE 1200V | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
![]() BSM100GD120DN2BOSA1 $390.80 | Infineon Technologies | IGBT MOD 1200V 150A 680W | Tray | Module | Chassis Mount | - | 150°C (TJ) |
| Infineon Technologies | IGBT MOD 600V 130A 430W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MOD 600V 130A 430W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MOD 600V 135A 420W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MODULE 2 LOW PWR ECONO2-1 | Tray | - | - | - | - | |
![]() BSM10GD120DN2E3224BOSA1 $46.00 | Infineon Technologies | IGBT MODULE 1200V 15A 80W | Bulk,Tray | Module | Chassis Mount | - | 150°C (TJ) |
| Infineon Technologies | LOW POWER ECONO AG-ECONO2A-211 | Tray | AG-ECONO2B | Chassis Mount | - | 150°C (TJ) |
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NXH50M65L4Q1PTGView Product
FZ2400R12HP4PHPSA1View Product
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