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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V TO-247 COPAKTube----
Infineon TechnologiesIGBT TRENCHBulk----
Infineon TechnologiesIGBT TRENCHBulk----
Bourns Inc.IGBT TRENCH FS 600V 10A TO-252Tape & Reel (TR),Cut Tape (CT)TO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 600V 60A TO-247NTubeTO-247N-3LThrough Hole--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 600V 40A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 600V 60A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 650V 80A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
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